| PART |
Description |
Maker |
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SD1271/2SD1271A 2SD1271AQ 2SD1271AP 2SD1271P |
2SD1271. 2SD1271A - NPN Transistor
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | SOT-186
Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7A条一（c）|的SOT - 186
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | SOT-186 晶体管|晶体管|叩| 80V的五（巴西）总裁| 7A条一（c）|的SOT - 186
|
Panasonic Industrial Solutions
Rohm Co., Ltd.
|
| STD9N10-1 STD9N10T4 STD9N10 |
N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR N沟道100V 0.23欧姆- 9A条的DPAK /像是iPak功率MOS器件
N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| KSC5502DTM |
NPN Triple Diffused Planar Silicon Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| KSH44H11TM |
NPN Epitaxial Silicon Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| 2SC4135 2SA1593 2SC4135R 2SA1593R |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-252
High-Voltage Switching Applications
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
SANYO[Sanyo Semicon Device]
|
| BC184LCD27Z |
Silicon NPN Small Signal Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| 2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
